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Munoz Merino, Elias

DX Centers

1994 - Trans Tech Publications

186 p.

  • During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs-GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem. [Publisher's text].
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