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Kordoš, P.

Gallium Arsenide III

1989 - Trans Tech Publications

380 p.

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility. [Publisher's text].

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