Silicon Carbide, III-Nitrides and Related Materials

Volume is indexed by Thomson Reuters CPCI-S (WoS).This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. [Publisher's text].

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